MMBTA42 데이터 시트보기 (PDF) - Guilin Strong Micro-Electronics Co., Ltd.
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MMBTA42 Datasheet PDF : 3 Pages
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桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GMBTA42(销售型號 MMBTA42) GMBTA43(销售型號 MMBTA43)
■ELECTRICAL CHARACTERISTICS 電特性
(TA=25℃ unless otherwise noted 如無特殊說明，溫度爲 25℃)
Characteristic
特性參數
Symbol
符號
Min
最小值
Collector-Emitter Breakdown Voltage(3)
集電極-射極擊穿電壓(IC=1mAdc,IB=0)
V(BR)CEO
GMBTA42
300
GMBTA43
200
Collector-Base Breakdown Voltage
V(BR)CBO
集電極-基極擊穿電壓(IC=100µAdc,IE=0)
GMBTA42
GMBTA43
300
200
Emitter-Base Breakdown Voltage
V(BR)EBO
發射極-基極擊穿電壓(IE= 100µAdc ,IC=0)
6.0
Emitter Cutoff Current 發射極截止電流
IEBO
(VEB=6.0Vdc,Ic=0)
GMBTA42
—
(VEB=4.0Vdc,Ic=0)
GMBTA43
__
Collector Cutoff Current 集電極截止電流
ICBO
(VCB=200Vdc,IE=0)
(VCB=160Vdc,IE=0)
GMBTA42
—
GMBTA43
__
DC Current Gain 直流電流增益
HFE
(Ic=1.0mAdc,VCE=10.0Vdc)
25
(Ic=10mAdc,VCE=10.0Vdc)
40
(Ic=30mAdc,VCE=10.0Vdc)
GMBTA42
40
GMBTA43
40
Collector-Emitter Saturation Voltage
集電極-發射極飽和壓降
(Ic=20mAdc, IB=2.0mAdc)
VCE(sat)
GMBTA42
—
GMBTA43
—
Base-Emitter Saturation Voltage
基極-發射極飽和壓降
(Ic=20mAdc, IB=2.0mAdc)
VBE(sat)
—
Current-Gain-Bandwidth Product
電流增益帶寬乘積
(Ic=10mAdc,VCE=20Vdc,f=100MHz)
fT
50
Collector-Base Capacitance 輸出電容
(VCB=20.0Vdc, IE=0, f=1.0MHz)
Ccb
GMBTA42
—
GMBTA43
__
１．FR-5=1.0×0.75×0.062in.
２．Alumina=0.4×0.3×0.024in.99.5%alumina.
３．Pulse Width<300us;Duty Cycle<2.0%.
Max
最大值
—
—
—
__
—
100
100
100
100
—
300
—
__
0.5
0.5
0.9
__
3.0
4.0
Unit
單位
Vdc
Vdc
Vdc
nAdc
nAdc
—
Vdc
Vdc
MHz
pF
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