MMBTA13 데이터 시트보기 (PDF) - Galaxy Semi-Conductor
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MMBTA13 Datasheet PDF : 3 Pages
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Production specification
NPN Darlington Amplifier Transistor MMBTA13/MMBTA14
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Symbol Parameter
Test conditions
MIN. MAX.
V(BR)CBO
Collector-base breakdown voltage
MMBTA13
MMBTA14
IC=100μA,IE=0
30
-
30
UNIT
V
V(BR)CEO
Collector-emitter breakdown voltage
MMBTA13 IC=0.1mA,IB=0
MMBTA14
30
-
V
30
V(BR)EBO Emitter-base breakdown voltage
IE=100μA,IC=0
10
-
V
ICBO
collector cut-off current
IE = 0; VCB = 30V
-
0.1 μA
ICEO
collector cut-off current
IE = 0; VCE = 10V
-
0.1 μA
DC current gain
MMBTA13 VCE = 5V; IC= 10mA
5000
hFE
MMBTA14 VCE = 5V;IC = 10mA
MMBTA13 VCE = 5V;IC = 100mA
10000
-
10000
MMBTA14 VCE = 5V;IC = 100mA
20000
VCE(sat)
collector-emitter saturation voltage IC = 100mA; IB = 0.1mA
-
1.5
V
VBE
Base-emitter on voltage
fT
transition frequency
IC=100mA,VCE=5V
-
2.0
V
IC = 10mA; VCE = 5.0V;
125
f = 100MHz
- MHz
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
C121
Rev.A
www.gmicroelec.com
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