Schottky Barrier Rectifier
INCHANGE Semiconductor
MS1045
FEATURES
·Low Forward Voltage
·150℃ Operating Junction Temperature
·Guaranteed Reverse Avalanche
·Low Power Loss/High Efficiency
·High Surge Capacity
·Low Stored Charge Majority Carrier Conduction
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
MECHANICAL CHARACTERISTICS
·Case: Epoxy, Molded
·Finish: All External Surfaces Corrosion Resistant and
Terminal Leads are Readily Solderable
·Lead Temperature for Soldering Purposes: 260℃ Max.
for 10 Seconds
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRMS
VR
Peak Repetitive Reverse Voltage
RMS Voltage
DC Blocking Voltage
45
V
IF(AV)
Average Rectified Forward Current
(Rated VR) TC= 106℃
10
A
Nonrepetitive Peak Surge Current
IFSM
8.3ms single half sine-wave superimposed 225
A
on rated load conditions TC= 150℃
TJ
Junction Temperature
-55~150 ℃
Tstg
Storage Temperature Range
-55~175 ℃
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