MSAFZ33N20A 데이터 시트보기 (PDF) - Microsemi Corporation
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MSAFZ33N20A Datasheet PDF : 2 Pages
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2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
MSAEZ33N20A
MSAFZ33N20A
Features
• Ultrafast rectifier in parallel with the body diode (MSAE type only)
• Rugged polysilicon gate cell structure
• Increased Unclamped Inductive Switching (UIS) capability
• Hermetically sealed, surface mount power package
• Low package inductance
• Very low thermal resistance
• Reverse polarity available upon request
200 Volts
33 Amps
70 mΩ
N-CHANNEL
ENHANCEMENT MODE
POWER MOSFET
Maximum Ratings @ 25°C (unless otherwise specified)
DESCRIPTION
SYMBOL
MAX.
Drain-to-Source Breakdown Voltage (Gate Shorted to Source)
@ TJ ≥ 25°C
Drain-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 MΩ
Continuous Gate-to-Source Voltage
Transient Gate-to-Source Voltage
Continuous Drain Current
Tj= 25°C
Tj=
100°C
Peak Drain Current, pulse width limited by TJmax
Repetitive Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Voltage Rate of Change of the Recovery Diode
@ IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C
Power Dissipation
Junction Temperature Range
Storage Temperature Range
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Thermal Resistance, Junction to Case
Mechanical Outline
BVDSS
BVDGR
VGS
VGSM
ID25
ID100
IDM
IAR
EAR
EAS
dv/dt
PD
Tj
Tstg
IS
ISM
θJC
200
200
+/-20
+/-30
33
20
132
33
16
790
TBD
300
-55 to +150
-55 to +150
33
132
0.4
DRAIN
UNIT
Volts
Volts
Volts
Volts
Amps
Amps
Amps
mJ
mJ
V/ns
Watts
°C
°C
Amps
Amps
°C/W
GATE
Datasheet# MSC0300A
SOURCE
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