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MP03TT1250 데이터 시트보기 (PDF) - Dynex Semiconductor

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MP03TT1250
Dynex
Dynex Semiconductor Dynex
MP03TT1250 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
MP03TT1250
ABSOLUTE MAXIMUM CURRENT RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Symbol
Parameter
Test Conditions
Max. Units
ILINE
Max. controllable RMS line
Continuous 50/60Hz
Twater (in) = 25˚C
798
A
current - single phase
4.5 Ltr/min
T
= 40˚C
703
A
water (in)
20 cycles, 50% duty cycle
T
= 25˚C
1410
A
water (in)
4.5 Ltr/min
T
= 40˚C
1258
A
water (in)
ITSM
Surge (non-repetitive) on-current
10ms half sine, Tj = 125˚C
8.1
kA
I2t
I2t for fusing
VR = 0
0.33X106 A2s
I
Surge (non-repetitive) on-current
TSM
10ms half sine, T = 125˚C
j
6.5
kA
I2t
I2t for fusing
VR = 50% VDRM
0.21X106 A2s
V
Isolation voltage
isol
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
3000
V
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Rth(j-w)
Thermal resistance - junction to water
(per thyristor)
T
Virtual junction temperature
vj
T
Storage temperature range
stg
-
Screw torque
-
Weight (nominal)
Test Conditions
dc, 4.5 Ltr/min
Half wave, 4.5 Ltr/min
3 Phase, 4.5 Ltr/min
Reverse (blocking)
-
Mounting - M6
Electrical connections - M4
-
Min. Max. Units
- 0.175 ˚C/kW
- 0.185 ˚C/kW
- 0.195 ˚C/kW
-
125
˚C
40 125
˚C
5(44)
- Nm (lb.ins)
8(70) 9(80) Nm (lb.ins)
- Refer to g
drawing
2/9
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