NDB410B 데이터 시트보기 (PDF) - Fairchild Semiconductor
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NDB410B Datasheet PDF : 6 Pages
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Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter
Conditions
Type Min Typ Max Units
SWITCHING CHARACTERISTICS (Note 2)
tD(ON)
Turn - On Delay Time
tr
Turn - On Rise Time
VDD = 50 V, ID = 9 A,
VGS = 10 V, RGEN = 24 Ω
tD(OFF)
Turn - Off Delay Time
tf
Turn - Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS = 80 V,
ID = 9 A, VGS = 10V
Qgd
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
ALL
7.5 20 nS
ALL
29 50 nS
ALL
26 45 nS
ALL
24 45 nS
ALL
11.6 17 nC
ALL
2.3
nC
ALL
5
nC
IS
Maximum Continuos Drain-Source Diode Forward Current
NDP410A
NDP410AE
NDB410A
NDB410AE
9
A
NDP410B
NDP410BE
NDB410B
NDB410BE
8
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
NDP410A
NDP410AE
NDB410A
NDB410AE
36 A
NDP410B
NDP410BE
NDB410B
NDB410BE
32 A
VSD
Drain-Source Diode Forward VGS = 0 V,
(Note 2) Voltage
IS = 4.5 A
ALL
TJ = 125°C
trr
Irr
Reverse Recovery Time
Reverse Recovery Current
VGS = 0 V, IS = 9 A,
dIS/dt = 100 A/µs
ALL
ALL
THERMAL CHARACTERISTICS
0.87 1.3 V
0.75 1.2 V
85 120 ns
6
9
A
RθJC
Thermal Resistance, Junction-to-Case
ALL
RθJA
Thermal Resistance, Junction-to-Ambient
ALL
Notes:
1. NDP410A/410B and NDB410A/410B are not rated for operation in avalanche mode.
2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
3 °C/W
62.5 °C/W
NDP410.SAM
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