NE425S01-T1 데이터 시트보기 (PDF) - California Eastern Laboratories.
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NE425S01-T1 Datasheet PDF : 5 Pages
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PRELIMINARY DATA SHEET
C to KU BAND SUPER LOW NE425S01
NOISE AMPLIFIER N-CHANNEL HJ-FET
FEATURES
• SUPER LOW NOISE FIGURE:
0.60 dB TYP at 12 GHz
• HIGH ASSOCIATED GAIN:
12.0 dB TYP at f = 12 GHz
• GATE LENGTH: ≤ 0.20 µm
• GATE WIDTH: 200 µm
• LOW COST PLASTIC PACKAGE
DESCRIPTION
The NE425S01 is a Hetero-Junction FET that utilizes the hetero
junction to create high mobility electrons. Its excellent low noise
and high associated gain make it suitable for DBS and other
commercial applications.
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
24
VDS = 2 V
ID = 10 mA
20
Ga
16
1.0
12
0.5
0
1
8
NF
2
4 6 8 10 14
Frequency, f (GHz)
4
20 30
RECOMMENDED
OPERATING CONDITIONS (TA = 25°C)
SYMBOLS
VDS
ID
Pin
CHARACTERISTICS UNITS MIN TYP MAX
Drain to Source Voltage V
23
Drain Current
mA
10 20
Input Power
dBm
0
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
NF1
GA1
gm
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Noise Figure, VDS = 2 V, ID = 10 mA, f = 12 GHz
Associated Gain, VDS = 2 V, ID = 10 mA, f = 12 GHz
Transconductance, VDS = 2 V, ID = 10 mA
NE425S01
S01
UNITS
MIN
TYP
MAX
dB
0.60
0.80
dB
10.5
12.0
mS
45
60
IDSS
VGS(off)
IGSO
Saturated Drain Current, VDS = 2 V, VGS = 0 V
Gate to Source Cutoff Voltage, VDS = 2 V, ID = 100 µA
Gate to Source Leak Current, VGS = -3 V
mA
20
60
90
V
-0.2
-0.7
-2.0
µA
0.5
10
Note:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line
as a "go-no-go" screening tuned for the "generic" type but not each specimen.
California Eastern Laboratories
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