NGTG15N60S1EG(2012) 데이터 시트보기 (PDF) - ON Semiconductor
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NGTG15N60S1EG Datasheet PDF : 9 Pages
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NGTG15N60S1EG
IGBT - Short-Circuit Rated
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Non−Punch Through (NPT) Trench construction, and
provides superior performance in demanding switching applications.
Offering both low on state voltage and minimal switching loss, the
IGBT is well suited for motor drive control and other hard switching
applications.
Features
• Low Saturation Voltage Resulting in Low Conduction Loss
• Low Switching Loss in Higher Frequency Applications
• 5 ms Short Circuit Capability
• Excellent Current versus Package Size Performance Density
• This is a Pb−Free Device
Typical Applications
• White Goods Appliance Motor Control
• General Purpose Inverter
• AC and DC Motor Control
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector−emitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
VCES
600
V
IC
A
30
15
Pulsed collector current, Tpulse limited by
ICM
120
A
TJmax
Gate−emitter voltage
VGE
$20
V
Power dissipation
@ TC = 25°C
@ TC = 100°C
PD
W
117
47
Short circuit withstand time
VGE = 15 V, VCE = 400 V, TJ v +150°C
Operating junction temperature range
tSC
5
ms
TJ
−55 to °C
+150
Storage temperature range
Tstg
−55 to °C
+150
Lead temperature for soldering, 1/8” from
TSLD
260
°C
case for 5 seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
15 A, 600 V
VCEsat = 1.5 V
C
G
E
C
G CE
TO−220
CASE 221A
STYLE 4
MARKING DIAGRAM
G15N60S1G
AYWW
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
NGTG15N60S1EG TO−220 50 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2012
1
August, 2012 − Rev. 2
Publication Order Number:
NGTG15N60S1E/D
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