NGTG15N60S1EG(2012) 데이터 시트보기 (PDF) - ON Semiconductor
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NGTG15N60S1EG Datasheet PDF : 9 Pages
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NGTG15N60S1EG
TYPICAL CHARACTERISTICS
1000
tf
td(off)
100
td(on)
tr
10
VCE = 400 V
VGE = 15 V
IC = 15 A
TJ = 150°C
1
5 15 25 35 45 55 65 75 85
RG, GATE RESISTOR (W)
Figure 13. Switching Time vs. RG
1.2
VGE = 15 V
IC = 15 A
0.9 RG = 22 W
TJ = 150°C
0.6
Eon
Eoff
0.3
0
175 225 275 325 375 425 475 525 575
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 14. Switching Loss vs. VCE
1000
tf
100
td_off
td_on
tr
10
VGE = 15 V
IC = 15 A
RG = 22 W
TJ = 150°C
1
175 225 275 325 375 425 475 525 575
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Time vs. VCE
1000
100
1 ms
100 ms
10
dc operation
50 ms
1
Single Nonrepetitive
Pulse TC = 25°C
0.1 Curves must be derated
linearly with increase
in temperature
0.01
1
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 16. Safe Operating Area
1000
100
10
1
0.1
0.01 VGE = 15 V, TC = 125°C
1
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Reverse Bias Safe Operating Area
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