NGTG15N60S1EG 데이터 시트보기 (PDF) - ON Semiconductor
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NGTG15N60S1EG Datasheet PDF : 9 Pages
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NGTG15N60S1EG
THERMAL CHARACTERISTICS
Rating
Thermal resistance junction to case, for IGBT
Thermal resistance junction to ambient
Symbol
RqJC
RqJA
Value
1.06
60
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol Min Typ Max Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
VGE = 0 V, IC = 500 mA
V(BR)CES 650
−
−
V
Collector−emitter saturation voltage
Gate−emitter threshold voltage
Collector−emitter cut−off current, gate−emitter
short−circuited
Gate leakage current, collector−emitter
short−circuited
VGE = 15 V , IC = 15 A
VGE = 15 V , IC = 15 A, TJ = 150°C
VGE = VCE , IC = 250 mA
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 150°C
VGE = 20 V, VCE = 0 V
VCEsat 1.3
1.5
1.7
V
1.55 1.75 1.95
VGE(th) 4.5
5.5
6.5
V
ICES
−
10
−
mA
−
−
200
IGES
−
−
100
nA
Forward Transconductance
DYNAMIC CHARACTERISTIC
VCE = 20 V, IC = 15 A
gfs
− 10.1 −
S
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Gate charge total
Gate to emitter charge
Gate to collector charge
VCE = 480 V, IC = 15 A, VGE = 15 V
SWITCHING CHARACTERISTIC , INDUCTIVE LOAD
Cies
− 1950 −
Coes
−
70
−
pF
Cres
−
48
−
Qg
−
88
−
Qge
−
16
−
nC
Qgc
−
42
−
Turn−on delay time
td(on)
−
65
−
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 25°C
VCC = 400 V, IC = 15 A
Rg = 22 W
VGE = 0 V / 15 V*
tr
−
28
−
ns
td(off)
−
170
−
tf
−
140
−
Eon
− 0.550 −
Turn−off switching loss
Eoff
− 0.350 −
mJ
Total switching loss
Ets
− 0.900 −
Turn−on delay time
td(on)
−
65
−
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 150°C
VCC = 400 V, IC = 15 A
Rg = 22 W
VGE = 0 V / 15 V*
tr
−
28
−
ns
td(off)
−
180
−
tf
−
260
−
Eon
− 0.650 −
Turn−off switching loss
Eoff
− 0.600 −
mJ
Total switching loss
Ets
− 1.250 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*Includes diode reverse recovery loss using NGTB15N60S1EG.
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