NP100P06PLG 데이터 시트보기 (PDF) - Renesas Electronics
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NP100P06PLG Datasheet PDF : 9 Pages
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-300
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
-250
-200
-150
VGS = −10 V
−4.5 V
-100
-50
0
0
Pulsed
-0.5
-1
-1.5
-2
VDS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
-3
-2.5
-2
-1.5
-1
-0.5 VDS = −10 V
ID = −1 mA
0
-75 -25 25
75 125 175 225
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
10
8
6
VGS = −4.5 V
4
−10 V
2
Pulsed
0
-1
-10
-100
-1000
ID - Drain Current - A
NP100P06PLG
FORWARD TRANSFER CHARACTERISTICS
-1000
-100
VDS = −10V
Pulsed
-10
-1
-0.1
-0.01
Tch = −55°C
−25°C
25°C
75°C
125°C
150°C
175°C
-0.001
0
-1
-2
-3
-4
-5
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1000
100
Tch = −55°C
−25°C
25°C
75°C
10
125°C
150°C
1
175°C
VDS = −10 V
Pulsed
0.1
-0.1
-1
-10
-100
ID - Drain Current - A
-1000
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
16
ID = −100 A
12
−50 A
−20 A
8
4
Pulsed
0
0
-5
-10
-15
-20
VGS - Gate to Source Voltage - V
4
Data Sheet D18695EJ3V0DS
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