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NP100P06PLG 데이터 시트보기 (PDF) - Renesas Electronics
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NP100P06PLG
SWITCHING P-CHANNEL POWER MOSFET
Renesas Electronics
NP100P06PLG Datasheet PDF : 9 Pages
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NP100P06PLG
PACKAGE DRAWING (Unit: mm)
TO-263 (MP-25ZP)
No plating
10.0 ±0.3
7.88 MIN.
4
0.5
4.45 ±0.2
1.3 ±0.2
0.025
to 0.25
0.75 ±0.2
2.54
12 3
0.6
±0.2
0
to 8˚
0.25
1. Gate
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
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Data Sheet D18695EJ3V0DS
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