NTB30N06LT4G 데이터 시트보기 (PDF) - ON Semiconductor
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NTB30N06LT4G Datasheet PDF : 8 Pages
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NTP30N06L, NTB30N06L
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 1)
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate−Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage (Note 1)
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 1)
(VGS = 5.0 Vdc, ID = 15 Adc)
Static Drain−to−Source On−Voltage (Note 1)
(VGS = 5.0 Vdc, ID = 30 Adc)
(VGS = 5.0 Vdc, ID = 15 Adc, TJ = 150°C)
Forward Transconductance (Note 1) (VDS = 7.0 Vdc, ID = 15 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 30 Vdc, ID = 30 Adc,
VGS = 5.0 Vdc, RG = 9.1 W) (Note 1)
Fall Time
Gate Charge
(VDS = 48 Vdc, ID = 30 Adc,
VGS = 5.0 Vdc) (Note 1)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 30 Adc, VGS = 0 Vdc) (Note 1)
(IS = 30 Adc, VGS = 0 Vdc, TJ = 150°C)
Reverse Recovery Time
(IS = 30 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms) (Note 1)
Reverse Recovery Stored Charge
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperatures.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
VSD
trr
ta
tb
QRR
Min
Typ
Max
Unit
Vdc
60
71.8
−
−
69
−
mV/°C
mAdc
−
−
1.0
−
−
10
−
−
±100
nAdc
Vdc
1.0
1.7
2.0
−
4.8
−
mV/°C
mW
−
38
46
Vdc
−
1.3
1.7
−
1.06
−
−
21
−
mhos
−
810
1150
pF
−
260
370
−
80
115
−
10
20
ns
−
200
400
−
15.6
30
−
62
120
−
16
32
nC
−
3.9
−
−
10
−
−
1.01
1.2
Vdc
−
1.03
−
−
50
−
ns
−
32
−
−
17
−
−
0.082
−
mC
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