NTB30N06T4G 데이터 시트보기 (PDF) - ON Semiconductor
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NTB30N06T4G Datasheet PDF : 7 Pages
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NTP30N06, NTB30N06
60
VGS = 10 V
50
9V
40
8V
7V
6.5 V
30
6V
20
5.5 V
10
5V
4.5 V
0
0
1
2
3
4
5
6
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
60
VDS ≥ 10 V
50
40
30
20
TJ = 25°C
10
TJ = 100°C
TJ = −55°C
0
2
4
6
8
10
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.09
0.08
VGS = 10 V
0.07
0.06
TJ = 100°C
0.05
0.04
TJ = 25°C
0.03
0.02
TJ = −55°C
0
0
10
20
30
40
50
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
0.09
0.08 VGS = 15 V
0.07
0.06
0.05
TJ = 100°C
0.04
TJ = 25°C
0.03
TJ = −55°C
0.02
0
60
0
10
20
30
40
50
60
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2.2
2
ID = 15 A
VGS = 10 V
1.8
1.6
10000
VGS = 0 V
1000
TJ = 150°C
1.4
100
1.2
1
0.8
0.6
−50 −25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
10
TJ = 100°C
1
0
10
20
30
40
50
60
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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