NVD4806N 데이터 시트보기 (PDF) - ON Semiconductor
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NVD4806N Datasheet PDF : 8 Pages
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NTD4806N, NVD4806N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−Tab (Drain)
Junction−to−Ambient − Steady State (Note 1)
Junction−to−Ambient − Steady State (Note 2)
1. Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
Symbol
RqJC
RqJC−TAB
RqJA
RqJA
Value
2.2
3.5
56.7
106.8
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
30
27
V
mV/°C
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
IDSS
IGSS
VGS = 0 V,
VDS = 24 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = "20 V
1.0
mA
10
"100
nA
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
1.5
2.5
V
6.0
mV/°C
Drain−to−Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
RDS(on)
gFS
VGS = 10 to 11.5 V ID = 30 A
ID = 15 A
VGS = 4.5 V
ID = 30 A
ID = 15 A
VDS = 15 V, ID = 15 A
4.9
6.0
mW
4.8
7.9
9.4
7.5
14
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Ciss
Coss
Crss
QG(TOT)
QG(TH)
QGS
QGD
QG(TOT)
SWITCHING CHARACTERISTICS (Note 4)
VGS = 0 V, f = 1.0 MHz,
VDS = 12 V
VGS = 4.5 V, VDS = 15 V,
ID = 30 A
VGS = 11.5 V, VDS = 15 V,
ID = 30 A
2142
pF
480
251
15
23
nC
3.0
7.0
7.0
37
nC
Turn−On Delay Time
td(on)
13.9
ns
Rise Time
Turn−Off Delay Time
tr
td(off)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
29.7
18.3
Fall Time
tf
7.8
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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