NTB5605P 데이터 시트보기 (PDF) - ON Semiconductor
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NTB5605P Datasheet PDF : 7 Pages
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NTB5605P, NTBV5605
40 VGS = −10 V
35 VGS = −9 V
VGS = −8 V
30 VGS = −7 V
25 TJ = 25°C
VGS = −6 V
VGS = −5.5 V
VGS = −5 V
20
VGS = −4.5 V
15
VGS = −4 V
10
VGS = −3.5 V
5
VGS = −3 V
0
0 1 2 3 4 5 6 7 8 9 10
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
40
VDS = −10 V
TJ = −55°C
30
TJ = 25°C
TJ = 125°C
20
10
0
0123 4567 89
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.5
0.45
VGS = −5.0 V
0.4
0.35
0.3
0.25
TJ = 125°C
0.2
0.15
TJ = 25°C
0.1
0.05
0
0
TJ = −55°C
5
10
15
20
25
30
−ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Drain Current and
Temperature
0.25
TJ = 25°C
0.225
0.2
0.175
0.15
0.125
VGS = −5.0 V
0.1
0.075
0.05
VGS = −10 V
0.025
0
0
3
6
9 12 15 18 21 24
−ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2
1.8
ID = −8.5 A
VGS = −5.0 V
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
−50
−25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
10000
VGS = 0 V
1000
100
TJ = 150°C
TJ = 125°C
10
1
150
5 10 15 20 25 30 35 40 45 50 55 60
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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