NUP1301U 데이터 시트보기 (PDF) - NXP Semiconductors.

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NUP1301U

Ultra low capacitance ESD protection array

NXP Semiconductors. 

NUP1301U

Ultra low capacitance ESD protection array

Rev. 1 — 28 January 2011

Product data sheet

1. Product profile

1.1 General description

Ultra low capacitance ElectroStatic Discharge (ESD) protection array in a small

SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package designed to

protect one signal line in rail-to-rail configuration from the damage caused by

ESD and other transients.

1.2 Features and benefits

 ESD protection of one signal line (rail-to-rail configuration)

 Ultra low diode capacitance: Cd = 0.6 pF

 ESD protection up to 30 kV

 IEC 61000-4-2; level 4 (ESD)

 IEC 61000-4-5 (surge); IPP = 11 A

 AEC-Q101 qualified

1.3 Applications

 Telecommunication networks

 Video line protection

 Microcontroller protection

 I2C-bus protection

 Antenna power supply

 Analog audio

 Class-D amplifier

1.4 Quick reference data

Table 1. Quick reference data

Tamb = 25 C unless otherwise specified.

Symbol Parameter

Conditions

Per diode

VRRM

repetitive peak reverse

voltage

Cd

diode capacitance

f = 1 MHz;

VR = 0 V

IR

reverse current

VR = 80 V

Min Typ Max Unit

-

-

80

V

-

0.6 0.75 pF

-

-

100 nA

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