NUP1301U 데이터 시트보기 (PDF) - NXP Semiconductors.
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NUP1301U Datasheet PDF : 14 Pages
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Nexperia
NUP1301U
Ultra low capacitance ESD protection array
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per device
PPP
IPP
Ptot
Tj
Tamb
Tstg
peak pulse power
peak pulse current
total power dissipation
junction temperature
ambient temperature
storage temperature
tp = 8/20 s
tp = 8/20 s
Tamb 25 C
[3][4] -
[3][4] -
[5][6] -
-
55
65
Max Unit
220
W
11
A
200
mW
150
C
+150 C
+150 C
[1] Pulse test: tp 300 s; 0.02.
[2] Tj = 25 C prior to surge.
[3] Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
[4] Measured from pin 3 to pins 1 and 2 (pins 1 and 2 are connected).
[5] Single diode loaded.
[6] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Table 6.
Symbol
VESD
ESD maximum ratings
Parameter
electrostatic discharge
voltage
Conditions
IEC 61000-4-2
(contact discharge)
machine model
MIL-STD-883
(human body model)
Min
[1][2] -
-
-
[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured from pin 3 to pins 1 and 2 (pins 1 and 2 are connected).
Max Unit
30
kV
400
V
10
kV
Table 7. ESD standards compliance
Standard
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3B (human body model)
Conditions
> 15 kV (air); > 8 kV (contact)
> 8 kV
NUP1301U
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 28 January 2011
© Nexperia B.V. 2017. All rights reserved
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