2SA908 데이터 시트보기 (PDF) - New Jersey Semiconductor
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2SA908 Datasheet PDF : 2 Pages
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, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SA908
DESCRIPTION
• High Power Dissipation-
: Pc= 150W(Max.)@Tc=25°C
• Collector-Emitter Breakdown Voltage-
: V(BR)CEo=-150V(Min.)
• Complement to Type 2SC1585
APPLICATIONS
• Designed for amplifier and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25-Q
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
-150
V
-150
V
VEBO
Emitter-Base Voltage
-6
V
Ic
Collector Current-Continuous
-15
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25"C
Tj
Junction Temperature
Tstg
Storage Temperature
-5
A
150
W
150
'C
-65-150
°c
PIN 1.BASE
2. EMITTER
3. COLLECT OR (CASE)
TO-3 package
r-M-l
\E L 1 _
1
O— D if l
*—
V~ r?
, \ /,"^N. /
"r^ii-— <9
! \M- X^
^130
t
(
:LK
OH
,. t
;
C
Bi
11
in n
MIN MAX
ft
39 DO
B 25.30 26.67
c I 7.80 8.50
D
0.90 1.10
E
t.40 1.60
(J
10 92
H
5 46
K U.JD 1350
L 1675 1705
N 19.40 1962
Q
400 420
U 3009 3020
V
430 450
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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