2SB697 데이터 시트보기 (PDF) - New Jersey Semiconductor
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2SB697 Datasheet PDF : 2 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One..
Silicon PNP Power Transistors
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SB697
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEo= -140V(Min)
• High Current Capability
• Wide Area of Safe Operation
• Complement to Type 2SD733
APPLICATIONS
• Designed forAF power amplifier applications.
• Recommended for output stage of SOW power amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-160
V
VCEO Collector-Emitter Voltage
-140
V
VEBO
Emitter-Base Voltage
-6
V
Ic
Collector Current-Continuous
-12
A
ICM
Emitter Current-Peak
Collector Power Dissipation
PC
@TC=25-C
Tj
Junction Temperature
Tstg
Storage Temperature
-20
A
100
W
150
r
-40-150 -c
PIN l.Base
2.Emitter
3.Co!lestor(case)
TO-3 Package
1i
I1c
(ran
DIM MM MAX
A
39JOO
B 25.30 26.67
c
7.80 S.50
0
0.90 1 10
£
f.40 1.60
<J
1093
H
546
K, U.J'0 13,50
L 1675 17.05
H 1940 i5.s5
4u
400 ' 420
30.00 3020
V
4.30 450
N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to he both accurate and reliable at the time or'eoina
to press. I louevcr, NJ Semi-Conductors assumes no responsibility for any errors or omissionsdiscovered in itsuse.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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