2SB613 데이터 시트보기 (PDF) - New Jersey Semiconductor
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2SB613 Datasheet PDF : 2 Pages
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J.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una.
Silicon PNP Power Transistors
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SB613
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -250V(Min)
• High Power Dissipation-
:Pc=150W(Max)@Tc=25°C
• High Current Capability
• Complement to Type 2SD583
APPLICATIONS
• Designed for high power amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25t:)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-250
V
VCEO Collector-Emitter Voltage
-250
V
VEBO Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-15
A
IB
Base Current
Collector Power Dissipation
PC
@Tc~25°C
Tj
Junction Temperature
Tstg
Storage Temperature
-5
A
150
W
200
•c
-65-200 •c
3
J
1
L
|
PIN l.Base
2. Emitter
3.Collestor(case'i
TO- 3 Package
it
L : , 1 1 J c
v~ *— Iu~—L-H*i /--rag
. \/ ,
H t . t 9 *7rjH
ci
J
B
1
nun
DIM MIN MAX
A
3900
B 2530 26 B7
C
'-80 8,50
D 0.90 1.10
£
t.40 160
G
10.92
H
546
K H.2.D 13.50
L 1675 1705
N 19*0 1962
0 4.00 420
U 3000 3020
V 4.30 450
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensionswithout
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductorsencourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
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