2SB1468 데이터 시트보기 (PDF) - New Jersey Semiconductor
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2SB1468 Datasheet PDF : 2 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One..
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SB1468
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -30V(Min)
• Low Collector Saturation Voltage-
: VCE(SSI) -0.5V(Max)@ (lc= -5A, IB= -0.25A)
• Complement to Type 2SD2219
APPLICATIONS
• Designed for high-speed inverters.converters.
ril: 1 But
2 Collector
3 Eaittcr
TO-Z20F p*ck*c*
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VcEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Ic
Collector Current-Continuous
ICM
Collector Current-Pulse
Collector Power Dissipation
@Ta=25'C
PC
Collector Power Dissipation
@TC=25'C
Tj
Junction Temperature
-60
V
-30
V
-6
V
-12
A
-20
A
2
W
25
150
•c
Tstg
Storage Temperature
-55-150 'C
tl—f JJ,J.f. -rrrrrr
MM. U . S . -nil-
i*11 II
'
I.KUI
' -"t0t1.-
,I
i;!j
mm
DIM U lYIiU in MAX
A 14.95 15.05
B 10,00 10.10
C 4.40 4.60
D 0.75 0.90
F 3.10 3.30
H 3.70 . 3.90
J 0.50 0.70
K 13.4 13.6
L 1.10 1.30
N 5.00 5.20
g 2.70 2.90
Rs
v
2.20
2.65
6.40
2.40
Z85
6.60
V! Semi-C'oijiUictors reserves the right to change test conditions, parameter limits and package dimensionsuithout
iniliee. Inrbnnalion furnished h> N.I Semi-Oimluetors is believed to he both accurate and reli:ible ;u the time ol'iioini;
ui pi-ess. I louever. N.I Scini-C'onductiirs assumes no responsibility tor an> errors or omissions discovered in ils use.
N.I Semi-( 'oiidutlors oiicoui'iiges customers In verily that datasheets are current before plaeinj: orders.
Qualiry Semi-Conductors
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