2SB1468 데이터 시트보기 (PDF) - New Jersey Semiconductor
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2SB1468 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc= -1 mA; RBE= *»
V(BR)CBO Collector-Base Breakdown Voltage-- lc=-1mA, IE=0
V(BR)£BO Emitter-Base Breakdown Voltage
l£=-1mA; lc=0
VcE(sat) Collector-Emitter Saturation Voltage lo= -5A; |B= -0 25A
Ir.BO
Collector Cutoff Current
VCB= -40V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -4V; lc= 0
huM
DC Current Gain
lc=-1A;VCE=-2V
HIFE2
DC Current Gain
Switching Times
lc= -6A; VCE= -2V
ton
Turrj-on Time
Utg
Storage Time
tf
Fall Time
Vcc- -10V RL= 20 ,
IC=-5A;IB1=-IB2=-0.5A,
• hFE 1 Classifications
Q
R
S
70-140 100-200 140-280
2SB1468
WIN TYP. MAX UNIT
-30
V
-60
V
-6
V
-0,5
V
-100 M A
-100 M A
70
280
30
0.1
MS
0.3
(J S
0.03
Ms
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