2SB1253 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SB1253

Silicon PNP Darlington Power Transistor

Inchange Semiconductor 

isc Silicon PNP Darlington Power Transistor

INCHANGE Semiconductor

2SB1253

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -5mA

VBE(sat) Base-Emitter Saturation Voltage

IC= -5A; IB= -5mA

ICBO

Collector Cutoff Current

VCB= -130V; IE= 0

ICEO

Collector Cutoff Current

VCE= -110V; IB= 0

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

hFE-1

DC Current Gain

IC= -1A; VCE= -5V

hFE-2

DC Current Gain

IC= -5A; VCE= -5V

fT

Current-Gain—Bandwidth Product IC= -0.5A; VCE= -10V

Switching Times

ton

Turn-on Time

tstg

Storage Time

tf

Fall Time

IC= -5A; IB1= -IB2= -5mA,

VCC= -50V,

MIN TYP. MAX UNIT

-110

V

-2.5

V

-3.0

V

-100 μA

-100 μA

-100 μA

2000

5000

30000

20

MHz

0.9

μs

2.5

μs

1.7

μs

 hFE-2 Classifications

Q

P

5000-15000 8000-30000

isc website：www.iscsemi.com

2 isc & iscsemi is registered trademark

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