B1204 데이터 시트보기 (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

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B1204

Silicon PNP transistor in a TO-252 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

2SB1204

Rev.E May.-2016

DATA SHEET

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Current – Continuous(Pulse)

Collector Power Dissipation

Junction Temperature

Storage Temperature Range



符号

Symbol

VCBO

VCEO

VEBO

IC

ICP

PC(Tc=25℃)

Tj

Tstg

电性能参数 / Electrical Characteristics(Ta=25℃)

数值

Rating

-60

-50

-6.0

-8.0

-12

1.0

20

150

单位

Unit

V

V

V

A

A

W

W

℃

参数

Parameter

Collector to Base Breakdown

Voltage

Collector to Emitter Breakdown

Voltage

符号

Symbol

测试条件

Test Conditions

VCBO IC=-10μA IE=0

VCEO IC=-1.0mA RBE=∞

Emitter to Base Breakdown Voltage VEBO IE=-10μA IC=0

Collector Cut-Off Current

ICBO VCB=-40V IE=0

Emitter Cut-Off Current

IEBO VEB=-4.0V IC=0

DC Current Gain

Collector to Emitter Saturation

Voltage

hFE(1)

hFE(2)

VCE=-2.0V

VCE=-2.0V

VCE(sat) IC=-4.0A

IC=-0.5A

IC=-6.0A

IB=-0.2A

Base to Emitter Saturation Voltage VBE(sat) IC=-3.0A IB=-0.15A

Transition Frequency

Collector output capacitance

fT VCE=-5.0V IC=-1.0A

Cob

VCB=-10V

f=1.0MHz

IE=0

Turn-On Time

ton

Storage Time

tstg IC=-10IB1=10IB2=-2.0A

Fall Time

tf

最小值 典型值 最大值 单位

Min Typ Max Unit

-60

V

-50

V

-6.0

V

-1.0 μA

-1.0 μA

70

400

35

-0.25 -0.5 V

-0.95 -1.3 V

130

MHz

95

pF

50

ns

450

ns

20

ns

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