2SC4029 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SC4029 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=8A ;IB=0.8A
VBE
Base-emitter voltage
IC=7A ; VCE=5V
ICBO
Collector cut-off current
VCB=230V IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=7A ; VCE=5V
fT
Transition frequency
IC=1A ; VCE=5V
COB
Collector output capacitance
f=1MHz;VCB=10V
hFE-1 classifications
R
O
55-110
80-160
Product Specification
2SC4029
MIN TYP. MAX UNIT
230
V
3.0
V
1.5
V
5
μA
5
μA
55
160
35
30
MHz
270
pF
2
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