2SC5621(2013) 데이터 시트보기 (PDF) - Isahaya Electronics

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2SC5621
(Rev.:2013)

FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

Isahaya Electronics 

DESCRIPTION

2SC5621 is a super mini package resin sealed silicon NPN

epitaxial transistor.

It is designed for high frequency voltage application.

2SC5621

FOR HIGH FREQUENCY AMPLIFY APPLICATION

SILICON NPN EPITAXIAL TYPE

OUTLINE DRAWING

1.5

0.35 0.8 0.35

Unit：ｍｍ

FEATURE

・High gain bandwidth product. fT=4.5GHz

・High gain, low noise.

・Can operate at low voltage.

・Super mini package for easy mounting.

①

②

③

APPLICATION

For TV tuners, High frequency voltage amplifier,

Cellular phone system

TERMINAL CONNECTOR

①：BASE

②：EMITTER

③：COLLECTOR

JEITA：SC-75A

MAXIMUM RATINGS（Ta=25℃）

Symbol

Parameter

VCBO Collector to Base voltage

VCEO Collector to Emitter voltage

VEBO Emitter to Base voltage

IC Collector current

PC Collector dissipation

Tj Junction temperature

Tstg Storage temperature

Ratings

Unit

20

V

12

V

3

V

50

mA

100

mW

＋150

℃

-55～＋150

℃

ELECTRICAL CHARACTERISTICS(Ta=25℃)

Symbol

Parameter

Test conditions

ICBO

IEBO

hFE

fT

Cob

|S21|2

NF

Collector cut off current

Emitter cut off current

DC forward current gain

Gain bandwidth product

Collector output capacitance

Insertion power gain

Noise figure

VCB=10V, IE=0mA

VEB=1V, IC=0mA

VCE=5V , IC=20mA

VCE=5V, IE=20mA

VCB=5V, IE=0mA , f=1MHz

VCE=5V, IC=20mA , f=1GHz

VCE=5V, IC=5mA , f=1GHz

MARKING

GW

TYPE NAME

hFE ITEM

Limits

Unit

Min Typ Max

-

-

1.0

μA

-

-

1.0

μA

50

-

250

-

-

4.5

-

GHz

-

1.0

-

pF

7.5

9.0

-

dB

-

1.5

-

dB

ISAHAYA ELECTRONICS CORPORATION

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