1000
直流電流増幅率−コレク
DC FORWARD CURRENT GAIN
VS. COLLECTOR CURRENT
Ta=25℃
VCE=5V
100
10
1
0.1
1
10
100
COLLECコTレOクRタC電UR流R EICNT IC(mA)
10.00
利得帯域幅積−コレク
GAIN BANDWIDTH PRODUCT
VS. COLLECTOR CURRENT
Ta=25℃
VCE=5
1.00
0.10
0.1
1.010.0
100.0
COLLEコCレTOクRタC電U流RR EICNT IC(mA)
COLLECコTレOクRタO出U力TP容U量T−CAPACITANCE
VSコ. CレOクLタL・EベCーTOスR間T電O圧B特AS性E VOLTAGE
10.0
Ta=25℃
IE=0mA
f=1MHz
1.0
0.1
0.1
1
10
100
COLLEコCレTOクRタ・TベOーBスA間SE電V圧O LVTAGE CBV(VC) B(V)
〈SMALL-SIGNAL TRANSISTOR〉
2SC5621
FOR HIGH FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
エミッタ接地伝達
COMMON EMITTER TRANSFER
100
Ta=25℃
VCE=5
10
1
0.1
0.01
0.001
0.5
0.6
0.7
0.8
0.9
1
BASE TOベEーMスIT・TエERミッVタO間LT電AG圧E V VBE(V)
電力利得−コレクタ
20.00
POWER GAIN VS. COLLECTOR CURRENT
18.00 Ta=25
VCE=5
16.00
14.00
f=0.5GH
12.00
10.00
8.00
f=1.0GH
6.00
4.00
2.00
0.00
0.11.010.0
100.0
COLLECTOコR レCUクRタR電EN流T ICIC(mA)
雑音指数−コレクタ電流特性
NOISE FIGURE VS. COLLECTOR CURRENT
5.0
4.5
Ta=25℃
VCE=5V
4.0
f=1.0GHz
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1
10
100
COLLECコTOレRクCタU電R流R EINT C(mICA()mA)