2SC4421 데이터 시트보기 (PDF) - New Jersey Semiconductor

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2SC4421

Silicon NPN Power Transistor

New Jersey Semiconductor 

£7\oducta, Ona.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

USA.

Silicon NPN Power Transistor

TELEPHONE: (973) 376-2922

(212)227-6005

2SC4421

DESCRIPTION

• Collector-Base Breakdown Voltage-

: V(BR)CBO= 500V(Min.)

• Wide Area of Safe Operation

• High Speed Switching

APPLICATIONS

• Designed for high speed switching applications.

1^

III

PIN 1.BASE

|Fj*

2 . COLLECTOR

,J

3-B1ITTER

<23

TO-220Fa package

ABSOLUTE MAXIMUM RATINGS (Ta=25'C)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

500

.V

VCES

Collector-Emitter Voltage

500

V

VCEO

Collector-Emitter Voltage

400

V

VEBO

Emitter-Base Voltage

7

V

lo

Collector Current-Continuous

3

A

I CM

Collector Current-Peak

6

A

IB

Base Current-Continuous

Collector Power Dissipation

@Ta=25°C

PC

Collector Power Dissipation

@TC=25'C

T,

Junction Temperature

1.2

A

2

W

40

150

'C

Tstg

Storage Temperature Range

-55-150 'C

~ G •-

T. .

tT . • •

A

ff

't

/

'*

H

t

K

•*•• ?*~L

"V

i

.. _.

•— J

~~i;.

~N~

mm

DIM WIN

A 16.35

B 9.90

C 4.35

D 0.75

F 3.20

G 6.90

H 5.15

J 0.45

K 13.35

L 1.10

N 4.99

Q 4.85

R 2.95

s 2.70

U 1.75

V 1.30

MAX

17.1S

10.10

4.65

0.30

3.40

7.10

5.45

0.75

13.65

1.30

5.18

5.15

3,25

2.90

2.0S

1.50

NJ Semi-Conductors reserves the right lo change test conditions, parameter limits and pnckage dimensions \vithout

IS

notice. Information furnished by NJ Semi-Conductors is believed to he both accurate and reliable at the time of goin;j

lo press. I luuevLT. N.I Semi-Conductors assumes no responsibilil\r an> errors or omissions discovered in its use.

N.I Semi-Conduclors encourages customers to \erify that datasheets are current before placing orders.

Quality 5emi-Conductors

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