2SC4385 데이터 시트보기 (PDF) - New Jersey Semiconductor
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2SC4385 Datasheet PDF : 2 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
10 ., One..
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC4385
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR,CEO= 80V(Min)
• Good Linearity of HFE
• Complement to Type 2SA1670
APPLICATIONS
• Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
120
V
VOEO Collector-Emitter Voltage
80
V
VEBO Emitter-Base Voltage
6
V
Ic
Collector Current-Continuous
6
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25'C
Tj
Junction Temperature
3
A
60
W
150
•c
Tstg
Storage Temperature Range
-55-150 r
B
HJ
PIN 1.BASE
2. COLLECTOR
3. EMITTER
TO-3PML package
1.
* Q.
I"
A
I
H
Kt
1
-~ C •*-
U
i'
v^ ..„ ' -
z
-^- Y --.
G •*" "*~L
mm
DtM WIN MAX
A 19.90 20.10
B 15.90 16,10
c 5.50 5.70
D 0.90 1.10
F 3.30 3.50
G 2.90 3.10
H 5,90 6.10
J 0.595 0.605
K 22.30 22.50
L 1.90 2.10
N 10.80 11.00
Q 4,90 5.10
R 3,75 3.95
S 3.20 3.40
U 9.90 10.10
V 4.70 4.90
z 1.90 2.10
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by N.I Semi-Conductors is believed to he both accurate and reliable at the time ofgoing
to press. However. N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-C'oncluctors encourages customers to verify that datasheets are current before placing orders.
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