2SC4385 데이터 시트보기 (PDF) - New Jersey Semiconductor
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2SC4385 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc= 50mA; IB= 0
VcE(sat) Collector-Emitter Saturation Voltage lc= 2A; IB= 0.2A
ICBO
Collector Cutoff Current
VCB=120V;IE=0
IEBO
Emitter Cutoff Current
VEB= 6V; lc= 0
hFE
DC Current Gain
lc= 2A; VCE= 4V
fr
Current-Gain—Bandwidth Product
IE= -0.5A; VCE= 12V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
lc=3A, RL=10Q,
IB1= -lBz= 0.3A, Vcc= 30V
2SC4385
MIN TYP. MAX UNIT
80
V
1.5
V
10
wA
10
uA
50
20
MHz
0.5
us
2.5
us
0.6
us
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