2SC2625 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SC2625 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0
VCEO(SUS) Collector-emitter sustaining voltage IC=1A ;IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=0.1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A
VBEsat Emitter-base saturation voltage
IC=4A ;IB=0.8A
ICBO
Collector cut-off current
VCB=450V IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE
DC current gain
IC=4A ; VCE=5V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=7.5A; IB1=-IB2=1.5A
RL=20Ω,Pw=20μs
Duty≤2%
Product Specification
2SC2625
MIN TYP. MAX UNIT
400
V
400
V
450
V
7
V
1.2
V
1.5
V
1.0 mA
0.1 mA
10
1.0
μs
2.0
μs
1.0
μs
2
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