2SC3060 데이터 시트보기 (PDF) - New Jersey Semiconductor
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2SC3060 Datasheet PDF : 2 Pages
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^E.mi-Condu.ato'i
, (inc..
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
2SC3060
DESCRIPTION
• High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 850V(Min)
• High Switching Speed
• Wide Area of Safe Operation
APPLICATIONS
• Switching regulators
• Motor controls
• Ultrasonic generators
• Class C and D amplifiers
• Deflection circuits
•
'-<
2
PIN 1.BASE
2. BWIITTER
3. COLLECT OR (CASE)
TO-3 pacKage
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1200
V
VCEO
Collector-Emitter Voltage
850
V
VEBO
Emitter-Base voltage
7
V
Ic
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
8
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ T0=25'C
Tj
Junction Temperature
3
A
150
W
175
"C
Tstg
Storage Temperature Range
-65-175
'C
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HUH
DIM MW MAX
A
39.00
B 25.30 26,6?
C
7.80 8.SO
D
0.90 1 10
£
1.40
1,60
G
1092
H
546
K
U.iQ 1350
I 1675 1705
H
1940 1962
0.
400 420
U 3000 3033
V
430 450
N.I Scnii-Cdiiductors reserves the right to change tost conditions, parameter limits anil package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to he both accurate and reliable at the time of eoiiu
ID press. I l o \ \ e \ e r . N.I Semi-Conductors assumes no responsibility lor anv errors or omissions discovered in its u>e.
N.I Scmi-Coiiduclors cncnurasies customers to \erily that Jntaslieets are ennviit before placing orders.
Qualify 5emi-Conductors
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