isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC6017
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 250mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 250mA
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 100uA; IC= 0
ICBO
Collector Cutoff Current
VCB= 40V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE
DC Current Gain
IC= 1A; VCE= 2V
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1.0MHz
fT
Current-Gain—Bandwidth Product IC= 1A; VCE= 5V
MIN TYP. MAX UNIT
0.36
V
1.4
V
50
V
6
V
10
μA
10
μA
200
700
60
pF
200
MHz
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