2SC4672 데이터 시트보기 (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

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2SC4672

Silicon NPN transistor in a SOT-89 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

2SC4672

Rev.E Mar.-2016

DATA SHEET

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Current – Continuous(Pulse)

Collector Power Dissipation

Collector Power Dissipation*

Junction Temperature

Storage Temperature Range



*加 40×40×0.7 的陶瓷板



符号

Symbol

VCBO

VCEO

VEBO

IC

ICP

PC

*PC

Tj

Tstg

电性能参数 / Electrical Characteristics(Ta=25℃)

数值

Rating

60

50

6.0

3.0

6.0

0.5

2.0

150

-55～150

单位

Unit

V

V

V

A

A

W

W

℃

℃

参数

Parameter

Collector to Base Breakdown

Voltage

Collector to Emitter Breakdown

Voltage

符号

Symbol

测试条件

Test Conditions

VCBO IC=50μA

VCEO IC=1.0mA

Emitter to Base Breakdown Voltage VEBO IE=50μA

Collector Cut-Off Current

ICBO VCB=60V

Emitter Base Cut-Off Current

IEBO VEB=5.0V

DC Current Gain

Collector to Emitter Saturation

Voltage

Transition Frequency

hFE(1)

hFE(2)

VCE=2.0V

VCE=2.0V

VCE(sat)

fT

IC=1.0A

VCE=2.0V

f=100MHz

IC=500mA

IC=1.5A

IB=50mA

IC=0.5A

Collector Output Capacitance

Cob VCB=10V f=1.0MHz

最小值 典型值 最大值 单位

Min Typ Max Unit

60

V

50

V

6.0

V

0.1 μA

0.1 μA

82

270

45

0.13 0.35 V

210

MHz

25

pF

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