2SC3494 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics
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2SC3494 Datasheet PDF : 5 Pages
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2SC3494
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
Unit
30
V
30
V
5
V
100
mA
300
mW
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to base breakdown
voltage
V(BR)CBO
30
Collector to emitter breakdown V(BR)CEO 30
voltage
Emitter to base breakdown
voltage
V(BR)EBO
5
Collector cutoff current
I CBO
—
Emitter cutoff current
I EBO
—
DC current transfer ratio
hFE*1
60
Base to emitter voltage
VBE
—
Collector to emitter saturation VCE(sat) —
voltage
Collector output capacitance Cob
—
Noise figure
NF
—
Typ
—
—
—
—
—
—
0.63
0.6
1.8
5.0
Power gain
PG
26
29
13
17
Note: 1. The 2SC3494 is grouped by hFE as follows.
B
C
60 to 120 100 to 200
Max
—
—
—
0.5
0.5
200
0.75
1.1
3.5
—
—
—
Unit
V
V
V
µA
µA
V
V
pF
dB
dB
Test conditions
IC = 10 µA, IE = 0
IC = 1 mA, RBE = ∞
IE = 10 µA, IC = 0
VCB = 18 V, IE = 0
VEB = 2 V, IC = 0
VCE = 12 V, IC = 2 mA
VCE = 12 V, IC = 2 mA
IC = 10 mA, IB = 1 mA
VCB = 10 V, IE = 0, f = 1 MHz
VCE = 6 V, IE = –1 mA,
f = 1 MHz, Rg = 500 Ω
VCE = 6 V, IE = –1 mA,
f = 10.7 MHz
VCE = 6 V, IE = –1 mA,
f = 100 MHz
See characteristic curves of 2SC460.
2
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