2SC4791 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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2SC4791

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

2SC4791

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

Unit

15

V

8

V

1.5

V

20

mA

150

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector output capacitance

Gain bandwidth product

Power gain

Noise figure

Note: Marking is “YA–”.

Symbol Min

I CBO

—

I CEO

—

I EBO

—

hFE

50

Cob

—

fT

7.0

PG

12.5

NF

—

Typ

—

—

—

120

0.4

10.0

15.5

1.2

Max

10

1

10

250

0.75

—

—

2.5

Unit

µA

mA

µA

pF

GHz

dB

dB

Test conditions

VCB = 15 V, IE = 0

VCE = 8 V, RBE = ∞

VEB = 1.5 V, IC = 0

VCE = 5 V, IC = 10 mA

VCB = 5 V, IE = 0, f = 1 MHz

VCE = 5 V, IC = 10 mA

VCE = 5 V, IC = 10 mA,

f = 900 MHz

VCE = 5 V, IC = 5 mA,

f = 900 MHz

Attention: This is electrostatic sensitive device.

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