2SC4988 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SC4988

Silicon NPN RF Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN RF Transistor

isc RF Product Specification

2SC4988

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ; IE= 0

ICBO

Collector Cutoff Current

VCB= 12V; IE= 0

ICEO

Collector Cutoff Current

VCE= 9V; RBE= ∞

IEBO

Emitter Cutoff Current

VEB= 1.5V; IC= 0

hFE

DC Current Gain

IC= 20mA ; VCE= 5V

fT

Current-Gain—Bandwidth Product IC= 20mA ; VCE= 5V

COB

Output Capacitance

IE= 0 ; VCB= 5V; f= 1.0MHz

PG

Power Gain

IC= 20mA ; VCE= 5V; f= 900MHz

NF

Noise Figure

IC= 5mA ; VCE= 5V; f= 900MHz

MIN TYP. MAX UNIT

15

V

1.0 μA

1.0 μA

10 μA

50

250

5.5 8.5

GHz

1.1 1.6 pF

7.5 10.5

dB

1.3 2.5 dB

isc website：www.iscsemi.cn

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