2SD1759 데이터 시트보기 (PDF) - ROHM Semiconductor
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2SD1759 Datasheet PDF : 3 Pages
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Transistors
Power transistor (40V, 2A)
2SD1759 / 2SD1861
2SD1759 / 2SD1861
zFeatures
1) Darlington connection for high DC current gain.
2) Built-in 4kΩ resistor between base and emitter.
3) Complements the 2SB1183 / 2SB1239.
zEquivalent circuit
C
B
RBE 4kΩ
C : Collector
B : Base
E : Emitter
E
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
2SD1861
2SD1759
Symbol
VCBO
VCER
VEBO
IC
PC
Junction temperature
Tj
Storage temperature
Tstg
∗ Printed circuit board 1.7mm thick, collector plating 1cm2 or larger.
Limits
40
40
5
2
1
∗
1
10
150
−55 to +150
Unit
V
V(RBE=10kΩ)
V
A(DC)
W
W(TC=25°C)
°C
°C
zPackaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pieces)
2SD1759
CPT3
1k to 200k
TL
2500
2SD1861
ATV
1k to
TV2
2500
zExternal dimensions (Unit : mm)
2SD1759
5.5 1.5
0.9
C0.5
0.8Min.
1.5
2.5
9.5
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
2SD1861
6.8
2.5
0.65Max.
0.5
(1) (2) (3)
2.54 2.54
1.05 0.45
Taping specifications
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
2SD1759
2SD1861
Transition frequency
Output capacitance
Symbol
BVCBO
BVCER
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
40
40
5
−
−
−
1000
1000
−
−
Typ.
−
−
−
−
−
0.8
−
−
150
11
Max.
−
−
−
1
1
1.5
20000
−
−
−
Unit
V
V
V
µA
µA
V
−
−
MHz
pF
Conditions
IC=50µA
IC=1mA , RBE=10kΩ
IE=50µA
VCB=24V
VEB=4V
IC/IB=0.6A/1.2mA
VCE/IC=3V/0.5A
VCE=6V , IE= −0.1A , f=100MHz
VCB=10V , IE=0A , f=1MHz
Rev.A
1/2
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