2SD1759 데이터 시트보기 (PDF) - ROHM Semiconductor
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2SD1759 Datasheet PDF : 3 Pages
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Transistors
2SD1759 / 2SD1861
zElectrical characteristics curves
1.0
Ta=25°C
0.8
100µA 90µA
80µA
70µA
60µA
0.6
50µA
40µA
0.4
30µA
20µA
0.2
10µA
0
IB= 0µA
0
1
2
3
4
5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
2000
Ta=25°C
1000
VCE= 3V
500
200
100
50
20
10
5
2
1
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Ground emitter output characteristics Fig.2 Ground emitter propagation characteristics
Ta=25°C
50000
20000
VCE=3V
10000
5000
1V
2000
1 2 5 10 20 50 100 200 500 1000 2000 5000
COLLECTOR CURRENT : IC (mA)
Fig.3 DC current gain vs. collector current
Ta=25°C
5.0
IC/IB=1000
2.0
1.0
0.5
0.2
1 2 5 10 20 50 100 200 500 1000 2000
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-emitter saturation voltage
vs. collector current
50
f=1MHz
IC=0A
Ta=25°C
20
10
5
2
1
0.1 0.2 0.5 1 2
5 10 20 50 100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.5 Colletor output capacitance
vs. collector-base voltage
50
f=1MHz
IC=0A
Ta=25°C
20
10
5
2
1
0.1 0.2 0.5 1 2
5 10 20 50 100
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.6 Emitter input capacitance
vs. emitter-base voltage
Rev.A
2/2
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