2SD2672 데이터 시트보기 (PDF) - Unspecified
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2SD2672 Datasheet PDF : 2 Pages
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Transistors
!Electrical characteristic curves
1000
Ta=125°C
Ta=25°C
Ta=−40°C
100
VCE=2V
Pulsed
10
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain
vs. collector current
2SD2672
1
0.1
0.01
IC/IB=20 /1
Pulsed
Ta=125°C
Ta=25°C
Ta=−40°C
1
Ta=25°C
0.1
Ta=−40°C
IC/IB=20/1
Pulsed
Ta=125°C
0.001
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current
0.01
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.3 Collector-emitter saturation voltage
vs. collector current
10
VBE=2V
Pulsed
1
Ta=125°C
0.1
0.01
Ta=25°C
Ta=−40°C
0.001
0
1
2
BASE TO EMITTER CURRENT : VBE (V)
Fig.4 Grounded emitter propagation
characteristics
1000
Cib
100
Cob
10
Ta=25℃
IC=0A
f=1MHz
1
0.001 0.01 0.1
1
10
100
EMITTER TO BASE VOLTAGE : VEB(V)
COLLECTOR TO BASE VOLTAGE : VCB(V)
Fig.5 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
1000
Ta=25°C
VCE=−2V
f=100MHz
100
10
0.01
0.1
1
10
EMITTER CURRENT : IE (A)
Fig.6 Gain bandwidth product
vs. emitter current
10000
tdon
1000
100
Ta=25°C
VCE=−5V
f=100MHz
tstg
tf
10
tr
1
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.7 Switching time
2/2
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