2SJ274 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SJ274

P-Channel MOSFET Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc P-Channel Mosfet Transistor

isc Product Specification

2SJ274

·ELECTRICAL CHARACTERISTICS (TC=25℃)

SYMBOL

PARAMETER

CONDITIONS

V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= -1mA

VGS(TH) Gate Threshold Voltage

VDS= VGS; ID= -1mA

RDS(ON) Drain-Source On-stage Resistance VGS= -10V; ID= -8A

IGSS

Gate Source Leakage Current

VGS= -12V;VDS= 0

IDSS

Zero Gate Voltage Drain Current

VDS= -100V,VGS= 0

VSD

Diode Forward Voltage

IF=-12A;VGS= 0

MIN MAX UNIT

-100

V

-1.0

-2

V

0.16

Ω

-10

uA

-0.1 mA

-1.5

V

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