2SK3568 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SK3568

N-Channel MOSFET Transistor

Inchange Semiconductor 

isc N-Channel MOSFET Transistor

INCHANGE Semiconductor

2SK3568

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

BVDSS

Drain-Source Breakdown Voltage VGS=0V; ID= 10mA

VGS(th)

Gate Threshold Voltage

VDS= 10V; ID= 1mA

RDS(on)

Drain-Source On-Resistance

VGS=10V; ID=6A

IGSS

Gate-Source Leakage Current

VGS= ±25V;VDS= 0V

IDSS

Drain-Source Leakage Current

VDS=500V; VGS= 0V

VSD

Diode forward voltage

IS=12A, VGS = 0 V

MIN TYP MAX UNIT

500

V

2

4

V

0.52

Ω

±10

µA

100 μA

1.7

V

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