MBT3946DW1T2G(2009) 데이터 시트보기 (PDF) - ON Semiconductor
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MBT3946DW1T2G Datasheet PDF : 10 Pages
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+0.5 V
10.6 V
MBT3946DW1T1G
(PNP)
< 1 ns
10 k
300 ns
DUTY CYCLE = 2%
3V
275
+9.1 V
0
Cs < 4 pF*
10 < t1 < 500 ms
t1
DUTY CYCLE = 2%
< 1 ns
10.9 V
10 k
1N916
3V
275
Cs < 4 pF*
* Total shunt capacitance of test jig and connectors
Figure 19. Delay and Rise Time
Equivalent Test Circuit
Figure 20. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
10
7.0
(PNP)
5.0
Cobo
Cibo
3.0
2.0
1.0
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
REVERSE BIAS (VOLTS)
Figure 21. Capacitance
20 30 40
TJ = 25°C
TJ = 125°C
5000
3000 VCC = 40 V
2000 IC/IB = 10
(PNP)
1000
700
500
300
200
100
70
50
1.0
QT
QA
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)
Figure 22. Charge Data
500
300
200
100
70
50
30
20
10
7
5
1.0
(PNP)
IC/IB = 10
tr @ VCC = 3.0 V
15 V
40 V
td @ VOB = 0 V
2.0 V
2.0 3.0 5.0 7.0 10
20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)
Figure 23. Turn −On Time
500
300
200
100
70
50
30
20
10
7
5
1.0
(PNP)
IC/IB = 20
VCC = 40 V
IB1 = IB2
IC/IB = 10
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)
Figure 24. Fall Time
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