RB501V-40 데이터 시트보기 (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd
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RB501V-40 Datasheet PDF : 4 Pages
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
SOD-323
RB501V -40 Schottky Barrier Diode
FEATURES
z Low current rectifier schottky diode
z Low voltage, low inductance
z For power supply
MAKINGM: 4
The marking bar indicates the cathode
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
Symbol
Peak reverse voltage
VRM
DC reverse voltage
VR
Mean rectifying current
IO
CNuornr-ernetp@etti=ti8v.e3mPseak Forward Surge IFSM
Power dissipation
PD
Thermal Resistance Junction to Ambient RθJA
Junction temperature
Tj
Storage temperature
Tstg
Limit
45
40
0.1
1
200
500
125
-55~+150
Unit
V
V
A
A
mW
℃/W
℃
℃
Electrical Ratings @Ta=25℃
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Symbol Min Typ
VF
IR
CT
6
Max Unit
0.55
V
0.34
30 μA
pF
Conditions
IF=100mA
IF=10mA
VR=10V
VR=10V, f=1MHZ
www.cj-elec.com
1
D,Mar,2015
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