RB160M-30 데이터 시트보기 (PDF) - Jiangsu High diode Semiconductor Co., Ltd
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RB160M-30 Datasheet PDF : 4 Pages
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RB160M-30
SOD1 23FL Plastic-Encapsulate Diodes
HD FL 45
Features
●Io
1A
●VRRM
30V
●High surge current capability
●Polarity: Color band denotes cathode
●Low Vf Low IR
Applications
● Rectifier
Marking
● 73
SOD-1 23FL
Symbol
VR
IO
IFSM
PD
RθJA
Tj
Tstg
Parameter
DC Blocking Voltage
Forward Current
Non-repetitive Peak Forward Surge Current @t=8.3ms
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Value
30
1
30
450
222
125
-55~+150
Unit
V
A
mW
℃/W
℃
℃
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Reverse current
Forward voltage
* Pulse test
Symbol
IR
VF(1)
VF(2)*
Test conditions
VR=15V
VR=30V
IF=500mA
IF=1000mA
Min Typ Max Unit
20
μA
50
μA
0.46
V
0.48
High Diode Semiconductor
1
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