U20D20C 데이터 시트보기 (PDF) - Thinki Semiconductor Co., Ltd.

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U20D20C

20.0 Ampere Heatsink Dual Common Cathode Ultra Fast Recovery Rectifiers

Thinki Semiconductor Co., Ltd. 

U20D20C thru U20D60C

Pb Free Plating Product

U20D20C/U20D30C/U20D40C/U20D50C/U20D60C

Pb

20.0 Ampere Heatsink Dual Common Cathode Ultra Fast Recovery Rectifiers

Features

Fast switching for high efficiency

Low forward voltage drop

High current capability

Low reverse leakage current

High surge current capability

Application

Automotive Inverters and Solar Inverters

Plating Power Supply,Motor Control,SMPS and UPS

Car Audio Amplifiers and Sound Device Systems

TO-3PN

Bottom Side Metal Heat Sink

Mechanical Data

Case: Heatsink TO-3PN open metal package

Epoxy: UL 94V-0 rate flame retardant

Terminals: Solderable per MIL-STD-202

method 208

Polarity: As marked on diode body

Mounting position: Any

Weight: 0.61 gram approximately

Case

Case

Case

Case

Positive

Negative

Doubler

Series

Common Cathode Common Anode Tandem Polarity Tandem Polarity

Suffix "C"

Suffix "A"

Suffix "D"

Suffix "S"

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 ℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

SYMBOL U20D20C

Maximum Recurrent Peak Reverse Voltage VRRM

200

Maximum RMS Voltage

VRMS

140

Maximum DC Blocking Voltage

VDC

200

Maximum Average Forward Rectified

Current TC=125 ℃(Total Device 2x10A=20A) IF(AV)

U20D30C

U20D40C

400

280

400

20.0

U20D50C UNIT

U20D60C

600

V

420

V

600

V

A

Peak Forward Surge Current, 8.3ms single

Half sine-wave superimposed on rated load IFSM

(JEDEC method)

200

A

Maximum Instantaneous Forward Voltage

VF

0.98

1.3

@ 10.0 A (Per Diode/Per Leg)

1.7

V

Maximum DC Reverse Current @TJ=25℃

IR

At Rated DC Blocking Voltage @TJ=125℃

Maximum Reverse Recovery Time (Note 1) Trr

Typical junction Capacitance (Note 2)

CJ

120

Typical Thermal Resistance (Note 3)

R JC

Operating Junction and Storage

Temperature Range

TJ, TSTG

5.0

100

35

70

0.85

-55 to + 150

μA

μA

nS

pF

℃/W

℃

NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.

(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.

(3) Thermal Resistance junction to case.

Rev.08T

© 1995 Thinki Semiconductor Co., Ltd.

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