14N06L 데이터 시트보기 (PDF) - Harris Semiconductor
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14N06L
Harris Semiconductor
14N06L Datasheet PDF : 11 Pages
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RFD14N06L, RFD14N06LSM, RFP14N06L
Typical Performance Curves
100
TC = 25oC
2
1
0.5
10
100µs
1ms
1
0.5
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
10
VDSS
MAX = 60V
10ms
100ms
DC
100 200
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 1. SAFE OPERATING AREA CURVE
0.2
PDM
0.1
0.1 0.05
0.02
t1
0.01
t2
SINGLE PULSE
0.01
10-5
10-4
10-3
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL
IMPEDANCE
TC = +25oC
16
200
TRANSCONDUCTANCE
FOR TEMPERATURES
MAY LIMIT CURRENT
ABOVE +25oC DERATE PEAK
IN THIS REGION
CURRENT AS FOLLOWS:
12
100
I = I25 175 - TC
150
8
4
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
VGS = 5V
VGS = 10V
10
10-5
10-4
10-3
10-2
10-1
100
101
t, PULSE WIDTH (s)
FIGURE 4. PEAK CURRENT CAPABILITY
35 VGS = 10V
30
25
PULSE DURATION = 250µs, TC = +25oC
VGS = 5V
VGS = 4.5V
VGS = 4V
20
15
10
VGS = 3V
5
VGS = 2.5V
0
0
1.5
3.0
4.5
6.0
7.5
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS
VDD = 15V
35
-55oC
30
+25oC
+175oC
25
20
15
10
PULSE TEST
5
PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX
0
0
1.5
3.0
4.5
6.0
7.5
VGS, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS
3
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