RMPA0951A-102 데이터 시트보기 (PDF) - Raytheon Company
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RMPA0951A-102 Datasheet PDF : 15 Pages
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RMPA0951A-102
3V Cellular CDMA Power Amplifier Module
PRODUCT INFORMATION
Figure 3
Evaluation Board
Layout, Schematic,
and Instructions
With device marking oriented right side up, RF IN is on the left and RF OUT is on the right.
Vcc= +3.5V nominal. Vref=+ 3.0V nominal to obtain Iccq= 80 mA. Operation at lower or higher quiescent currents
can be achieved by decreasing or increasing Vref voltage relative to +3.0V.
First ground the PCB (GND terminal) and apply +3.5V to the collector supply terminals (Vcc1, Vcc2). Next apply
+3.0V to the reference supply (Vref terminal). Quiescent collector current with no RF applied will be about 80 mA.
Reference supply current with or without RF applied will be about 15 mA. When turning amplifier off, reverse
power supply sequence.
Apply -20 dBm RF input power at Cellular frequency (824-849 MHz). After making any initial small signal
measurements at this drive level, input power may be increased up to a maximum of +7 dBm for large signal,
analog (AMPS) or digital CDMA measurements. Do not exceed +7 dBm input power.
Vcc1
PCB Specifications:
Material: Rogers RO4003
Dimensions: 2.0”x1.5”x0.032”
Metallization: 1/2 oz Copper Cladding
Vref
Vcc2
PCB Schematic
Note: Addition of C3 bypass
capacitor on Vref pin recommended
to minimize Rx band noise.
C1 *
3.3 µF
www.raytheonrf.com
SMA1
RF IN
Vcc1
50 ohm TRL
Vref
C3 *
1000 pF
1
6
N/C
Raytheon
2
5 50 ohm TRL
RMPA0951A-102
3 PPYYWWZZZ 4
Vcc2*
7 (package base)
C2 *
3.3 µF
SMA2
RF OUT
* Minimum bypass capacitance recommended for best linearity/low-noise performance.
Characteristic performance data and specifications are subject to change without notice.
Revised March 29, 2002
Page 3
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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