RUR410 데이터 시트보기 (PDF) - Harris Semiconductor
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RUR410 Datasheet PDF : 4 Pages
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Specifications RURD410, RURD415, RURD420, RURD410S, RURD415S, RURD420S
Electrical Specifications TC = +25oC, Unless Otherwise Specified
LIMITS
SYMBOL
TEST
CONDITION
RURD410
RURD410S
MIN TYP MAX
RURD415
RURD415S
MIN TYP MAX
RURD420
RURD420S
MIN TYP MAX
UNITS
VF
IF = 4A, TC = +25oC
VF
IF = 4A, TC = +150oC
-
-
1.0
-
-
1.0
-
-
1.0
V
-
-
0.83
-
-
0.83
-
-
0.83
IR
VR = 100V, TC = +25oC
VR = 150V, TC = +25oC
VR = 200V, TC = +25oC
-
-
100
-
-
-
-
-
-
-
-
-
-
-
100
-
-
-
-
-
-
-
-
-
-
-
100
µA
IR
VR = 100V, TC = +150oC
-
-
500
-
-
-
-
-
-
VR = 150V, TC = +150oC
-
-
-
-
-
500
-
-
-
VR = 200V, TC = +150oC
-
-
-
-
-
-
-
-
500
µA
tRR
IF = 1A, dIF/dt = 100A/µs
-
-
30
-
-
30
-
-
30
IF = 4A, dIF/dt = 100A/µs
-
-
35
-
-
35
-
-
35
tA
IF = 4A, dIF/dt = 100A/µs
-
11
-
-
11
-
-
11
-
ns
tB
IF = 4A, dIF/dt = 100A/µs
-
9
-
-
9
-
-
9
-
QRR
IF = 4A, dIF/dt = 100A/µs
-
12
-
-
12
-
-
12
-
nC
CJ
RθJC
VR = 10V, IF = 0A
-
15
-
-
-
5
-
15
-
-
-
5
-
15
-
pF
-
-
5
oC/W
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
tRR = Reverse recovery time (See Figure 2), summation of tA + tB.
tA = Time to reach peak reverse current (See Figure 2).
tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2).
RθJC = Thermal resistance junction to case.
EAVL = Controlled avalanche energy (See Figures 9 and 10).
pw = pulse width.
D = duty cycle.
V1 AMPLITUDE CONTROLS IF
V2 AMPLITUDE CONTROLS dIF/dt
L1 = SELF INDUCTANCE OF
R4 + LLOOP
R1
+V1
0
t2
t1
Q1
R2
0
-V2
t3
Q3
R3
+V3
Q2
t1 ≥ 5tA(MAX)
t2 > tRR
t3 > 0
L1 ≤ tA(MIN)
R4
10
LLOOP
DUT
Q4
C1
R4
-V4
dIF
IF
dt
0
tRR
tA
tB
0.25 IRM
IRM
VR
VRM
FIGURE 1. tRR TEST CIRCUIT
FIGURE 2. tRR WAVEFORMS AND DEFINITIONS
5-22
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